Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFQ60N60X
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2,290
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IXYS MOSFET N-CH 600V 60A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V
IXFH60N60X
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RFQ
1,774
In-stock
IXYS MOSFET N-CH 600V 60A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V