Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,165
In-stock
IXYS MOSFET N-CH 800V 44A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ 550W (Tc) N-Channel - 800V 44A (Tc) 165 mOhm @ 22A, 10V 4V @ 8mA 380nC @ 10V 10000pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
825
In-stock
IXYS MOSFET N-CH 1000V 30A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ 550W (Tc) N-Channel - 1000V 30A (Tc) 280 mOhm @ 30A, 10V 5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,392
In-stock
IXYS MOSFET N-CH 900V 34A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ 580W (Tc) N-Channel - 900V 34A (Tc) 220 mOhm @ 19.5A, 10V 5V @ 8mA 375nC @ 10V 13400pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,979
In-stock
IXYS MOSFET N-CH 600V 60A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ 700W (Tc) N-Channel - 600V 60A (Tc) 80 mOhm @ 30A, 10V 4V @ 8mA 380nC @ 10V 10000pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,234
In-stock
IXYS MOSFET N-CH 600V 41A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ 500W (Tc) N-Channel - 600V 41A (Tc) 130 mOhm @ 22A, 10V 4.5V @ 8mA 330nC @ 10V 8900pF @ 25V 10V ±20V