Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,044
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IXYS MOSFET N-CH 55V 100A ISOPLUS-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 150W (Tc) N-Channel - 55V 100A (Tc) 7.7 mOhm @ 80A, 10V 4V @ 1mA 100nC @ 10V - 10V ±20V
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1,979
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IXYS MOSFET N-CH 55V 100A I4-PAC-5 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole i4-Pac™-5 ISOPLUS i4-PAC™ - N-Channel - 55V 100A (Tc) 7.2 mOhm @ 80A, 10V 4V @ 1mA 100nC @ 10V - 10V ±20V
IXTA100N04T2
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891
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IXYS MOSFET N-CH 40V 100A TO-263 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 150W (Tc) N-Channel - 40V 100A (Tc) 7 mOhm @ 25A, 10V 4V @ 250µA 25.5nC @ 10V 2690pF @ 25V 10V ±20V
IXFR180N15P
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3,278
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IXYS MOSFET N-CH 150V 100A ISOPLUS247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 300W (Tc) N-Channel - 150V 100A (Tc) 13 mOhm @ 90A, 10V 5V @ 4mA 240nC @ 10V 7000pF @ 25V 10V ±20V
IXTP100N04T2
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1,899
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IXYS MOSFET N-CH 40V 100A TO-220 TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 40V 100A (Tc) 7 mOhm @ 25A, 10V 4V @ 250µA 25.5nC @ 10V 2690pF @ 25V 10V ±20V