Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFR18N90P
RFQ
VIEW
RFQ
2,845
In-stock
IXYS MOSFET N-CH 900V ISOPLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 200W (Tc) N-Channel - 900V 10.5A (Tc) 660 mOhm @ 9A, 10V 6V @ 1mA 97nC @ 10V 5230pF @ 25V 10V ±30V
IXFP10N60P
RFQ
VIEW
RFQ
3,251
In-stock
IXYS MOSFET N-CH 600V 10A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 600V 10A (Tc) 740 mOhm @ 5A, 10V 5.5V @ 1mA 32nC @ 10V 1610pF @ 25V 10V ±30V
IXFP12N50P
RFQ
VIEW
RFQ
3,712
In-stock
IXYS MOSFET N-CH 500V 12A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 6A, 10V 5.5V @ 1mA 29nC @ 10V 1830pF @ 25V 10V ±30V
IXFA12N50P
RFQ
VIEW
RFQ
1,079
In-stock
IXYS MOSFET N-CH 500V 12A D2-PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 200W (Tc) N-Channel - 500V 12A (Tc) 500 mOhm @ 6A, 10V 5.5V @ 1mA 29nC @ 10V 1830pF @ 25V 10V ±30V
IXFA10N60P
RFQ
VIEW
RFQ
737
In-stock
IXYS MOSFET N-CH 600V 10A D2-PAK HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 200W (Tc) N-Channel - 600V 10A (Tc) 740 mOhm @ 5A, 10V 5.5V @ 1mA 32nC @ 10V 1610pF @ 25V 10V ±30V