Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH34N65X2
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1,787
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IXYS MOSFET N-CH 650V 34A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel 650V 34A (Tc) 105 mOhm @ 17A, 10V 4.5V @ 4mA 53nC @ 10V 3120pF @ 25V 10V ±30V
IXTH80N65X2
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RFQ
1,372
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IXYS MOSFET N-CH 650V 80A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel 650V 80A (Tc) 40 mOhm @ 40A, 10V 4.5V @ 4mA 144nC @ 10V 7753pF @ 25V 10V ±30V
IXTH62N65X2
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RFQ
3,186
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IXYS MOSFET N-CH 650V 62A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 780W (Tc) N-Channel 650V 62A (Tc) 52 mOhm @ 31A, 10V 4.5V @ 4mA 104nC @ 10V 5940pF @ 25V 10V ±30V
IXTH48N65X2
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RFQ
1,227
In-stock
IXYS MOSFET N-CH 650V 48A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 660W (Tc) N-Channel 650V 48A (Tc) 68 mOhm @ 24A, 10V 4.5V @ 4mA 77nC @ 10V 4420pF @ 25V 10V ±30V