Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH80N075L2
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3,929
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IXYS MOSFET N-CH 75V 80A TO247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel 75V 80A (Tc) 24 mOhm @ 40A, 10V 4.5V @ 250µA 103nC @ 10V 3600pF @ 25V 10V ±20V
IXTH64N10L2
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648
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IXYS MOSFET N-CH 100V 64A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 357W (Tc) N-Channel 100V 64A (Tc) 32 mOhm @ 32A, 10V 4.5V @ 250µA 100nC @ 10V 3620pF @ 25V 10V ±20V
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2,673
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IXYS MOSFET N-CH HiPerFET™, TrenchT2™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 350W (Tc) N-Channel 150V 76A (Tc) 22 mOhm @ 38A, 10V 4.5V @ 250µA 97nC @ 10V 5800pF @ 25V 10V ±20V
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2,700
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IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 180W (Tc) N-Channel 700V 12A (Tc) 300 mOhm @ 6A, 10V 4.5V @ 250µA 19nC @ 10V 960pF @ 25V 10V ±30V
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789
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IXYS MOSFET N-CH Linear L2™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 540W (Tc) N-Channel 75V 140A (Tc) 11 mOhm @ 70A, 10V 4.5V @ 250µA 275nC @ 10V 9300pF @ 25V 10V ±20V