Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTQ160N10T
RFQ
VIEW
RFQ
2,554
In-stock
IXYS MOSFET N-CH 100V 160A TO-3P TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V
IXTA160N10T7
RFQ
VIEW
RFQ
1,705
In-stock
IXYS MOSFET N-CH 100V 160A TO-263-7 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7 (IXTA..7) 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 1mA 132nC @ 10V 6600pF @ 25V 10V ±30V
IXTA160N10T
RFQ
VIEW
RFQ
3,000
In-stock
IXYS MOSFET N-CH 100V 160A TO-263 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V
IXTH160N10T
RFQ
VIEW
RFQ
3,606
In-stock
IXYS MOSFET N-CH 100V 160A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V
IXTP160N10T
RFQ
VIEW
RFQ
2,070
In-stock
IXYS MOSFET N-CH 100V 160A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V