Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH7N80
RFQ
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RFQ
2,094
In-stock
IXYS MOSFET N-CH 800V 7A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel 800V 7A (Tc) 1.4 Ohm @ 3.5A, 10V 4.5V @ 2.5mA 130nC @ 10V 2800pF @ 25V 10V ±20V
IXFH13N50
RFQ
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RFQ
2,385
In-stock
IXYS MOSFET N-CH 500V 13A TO-247AD HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel 500V 13A (Tc) 400 mOhm @ 6.5A, 10V 4V @ 2.5mA 120nC @ 10V 2800pF @ 25V 10V ±20V
IXTH36P10
RFQ
VIEW
RFQ
2,879
In-stock
IXYS MOSFET P-CH 100V 36A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) P-Channel 100V 36A (Tc) 75 mOhm @ 18A, 10V 5V @ 250µA 95nC @ 10V 2800pF @ 25V 10V ±20V
IXTH6N80A
RFQ
VIEW
RFQ
2,599
In-stock
IXYS MOSFET N-CH 800V 6A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) N-Channel 800V 6A (Tc) 1.4 Ohm @ 3A, 10V 4.5V @ 250µA 130nC @ 10V 2800pF @ 25V 10V ±20V