Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,531
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IXYS POWER MOSFET TO-3 - Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA 180W (Tc) N-Channel - 1000V 5A (Tc) 2 Ohm @ 2.5A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
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1,472
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IXYS POWER MOSFET TO-3 - Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-204AA 180W (Tc) N-Channel - 1000V 5A (Tc) 2.4 Ohm @ 2.5A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXFT6N100Q
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795
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IXYS MOSFET N-CH 1000V 6A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 4.5V @ 2.5mA 48nC @ 10V 2200pF @ 25V 10V ±20V
IXTH5N100A
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3,272
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IXYS MOSFET N-CH 1000V 5A TO247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 180W (Tc) N-Channel - 1000V 5A (Tc) 2 Ohm @ 2.5A, 10V 4.5V @ 250µA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXFH6N100
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3,492
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IXYS MOSFET N-CH 1KV 6A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel - 1000V 6A (Tc) 2 Ohm @ 500mA, 10V 4.5V @ 2.5mA 130nC @ 10V 2600pF @ 25V 10V ±20V
IXFH6N100Q
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2,679
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IXYS MOSFET N-CH 1000V 6A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 180W (Tc) N-Channel - 1000V 6A (Tc) 1.9 Ohm @ 3A, 10V 4.5V @ 2.5mA 48nC @ 10V 2200pF @ 25V 10V ±20V