Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFX180N15P
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2,614
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IXYS MOSFET N-CH 150V 180A PLUS 247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 830W (Tc) N-Channel - 150V 180A (Tc) 11 mOhm @ 90A, 10V 5V @ 4mA 240nC @ 10V 7000pF @ 25V 10V ±20V
IXFX360N15T2
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2,872
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IXYS MOSFET N-CH 150V 360A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1670W (Tc) N-Channel - 150V 360A (Tc) 4 mOhm @ 60A, 10V 5V @ 8mA 715nC @ 10V 47500pF @ 25V 10V ±20V
IXFX150N15
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2,057
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IXYS MOSFET N-CH 150V 150A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 150V 150A (Tc) 12.5 mOhm @ 75A, 10V 4V @ 8mA 360nC @ 10V 9100pF @ 25V 10V ±20V
IXFX240N15T2
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852
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IXYS MOSFET N-CH 150V 240A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 150V 240A (Tc) 5.2 mOhm @ 60A, 10V 5V @ 8mA 460nC @ 10V 32000pF @ 25V 10V ±20V