Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFK21N100Q
RFQ
VIEW
RFQ
2,651
In-stock
IXYS MOSFET N-CH 1000V 21A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 170nC @ 10V 6900pF @ 25V 10V ±20V
IXFK80N65X2
RFQ
VIEW
RFQ
2,623
In-stock
IXYS MOSFET N-CH 650V 80A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 890W (Tc) N-Channel - 650V 80A (Tc) 40 mOhm @ 40A, 10V 5.5V @ 4mA 143nC @ 10V 8245pF @ 25V 10V ±30V
IXFK100N65X2
RFQ
VIEW
RFQ
1,753
In-stock
IXYS MOSFET N-CH 650V 100A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 1040W (Tc) N-Channel - 650V 100A (Tc) 30 mOhm @ 50A, 10V 5.5V @ 4mA 180nC @ 10V 11300pF @ 25V 10V ±30V
IXFK50N85X
RFQ
VIEW
RFQ
1,307
In-stock
IXYS 850V/50A ULTRA JUNCTION X-CLASS HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 890W (Tc) N-Channel - 850V 50A (Tc) 105 mOhm @ 500mA, 10V 5.5V @ 4mA 152nC @ 10V 4480pF @ 25V 10V ±30V