Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,165
In-stock
IXYS MOSFET N-CH 800V 44A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 550W (Tc) N-Channel - 800V 44A (Tc) 165 mOhm @ 22A, 10V 4V @ 8mA 380nC @ 10V 10000pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
825
In-stock
IXYS MOSFET N-CH 1000V 30A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 550W (Tc) N-Channel - 1000V 30A (Tc) 280 mOhm @ 30A, 10V 5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,979
In-stock
IXYS MOSFET N-CH 600V 60A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 700W (Tc) N-Channel - 600V 60A (Tc) 80 mOhm @ 30A, 10V 4V @ 8mA 380nC @ 10V 10000pF @ 25V 10V ±20V
IXTH68P20T
RFQ
VIEW
RFQ
3,286
In-stock
IXYS MOSFET P-CH 200V 68A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 568W (Tc) P-Channel - 200V 68A (Tc) 55 mOhm @ 34A, 10V 4V @ 250µA 380nC @ 10V 33400pF @ 25V 10V ±15V
IXFK90N20
RFQ
VIEW
RFQ
3,551
In-stock
IXYS MOSFET N-CH 200V 90A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 200V 90A (Tc) 23 mOhm @ 45A, 10V 4V @ 8mA 380nC @ 10V 9000pF @ 25V 10V ±20V