Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFB100N50Q3
RFQ
VIEW
RFQ
2,408
In-stock
IXYS MOSFET N-CH 500V 100A PLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA PLUS264™ 1560W (Tc) N-Channel - 500V 100A (Tc) 49 mOhm @ 50A, 10V 6.5V @ 8mA 255nC @ 10V 13800pF @ 25V 10V ±30V
IXFX140N25T
RFQ
VIEW
RFQ
3,340
In-stock
IXYS MOSFET N-CH 250V 140A PLUS247 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 250V 140A (Tc) 17 mOhm @ 60A, 10V 5V @ 4mA 255nC @ 10V 19000pF @ 25V 10V ±20V
IXTH60N20L2
RFQ
VIEW
RFQ
3,828
In-stock
IXYS MOSFET N-CH 200V 60A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 540W (Tc) N-Channel - 200V 60A (Tc) 45 mOhm @ 30A, 10V 4.5V @ 250µA 255nC @ 10V 10500pF @ 25V 10V ±20V
IXTQ60N20L2
RFQ
VIEW
RFQ
2,973
In-stock
IXYS MOSFET N-CH 200V 60A TO-3P Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 540W (Tc) N-Channel - 200V 60A (Tc) 45 mOhm @ 30A, 10V 4.5V @ 250µA 255nC @ 10V 10500pF @ 25V 10V ±20V
IXFK140N25T
RFQ
VIEW
RFQ
3,880
In-stock
IXYS MOSFET N-CH 250V 140A TO264 GigaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 960W (Tc) N-Channel - 250V 140A (Tc) 17 mOhm @ 60A, 10V 5V @ 4mA 255nC @ 10V 19000pF @ 25V 10V ±20V