Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTU1R4N60P
RFQ
VIEW
RFQ
649
In-stock
IXYS MOSFET N-CH 600V 1.4A TO251 PolarHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 50W (Tc) N-Channel - 600V 1.4A (Tc) 9 Ohm @ 700mA, 10V 5.5V @ 25µA 5.2nC @ 10V 140pF @ 25V 10V ±30V
IXTP2R4N50P
RFQ
VIEW
RFQ
1,500
In-stock
IXYS MOSFET N-CH 500V 2.4A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 55W (Tc) N-Channel - 500V 2.4A (Tc) 3.75 Ohm @ 500mA, 10V 5.5V @ 25µA 6.1nC @ 10V 240pF @ 25V 10V ±30V
IXTP1R4N60P
RFQ
VIEW
RFQ
3,780
In-stock
IXYS MOSFET N-CH 600V 1.4A TO-220 PolarHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel - 600V 1.4A (Tc) 9 Ohm @ 700mA, 10V 5.5V @ 25µA 5.2nC @ 10V 140pF @ 25V 10V ±30V
IXTP1R6N50P
RFQ
VIEW
RFQ
873
In-stock
IXYS MOSFET N-CH 500V 1.6A TO-220 PolarHV™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 43W (Tc) N-Channel - 500V 1.6A (Tc) 6.5 Ohm @ 500mA, 10V 5.5V @ 25µA 3.9nC @ 10V 140pF @ 25V 10V ±30V