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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP1N80P	RFQ VIEW	PDF RFQ	1,924 In-stock	IXYS	MOSFET N-CH 800V 1A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	42W (Tc)	N-Channel	-	800V	1A (Tc)	14 Ohm @ 500mA, 10V	4V @ 50µA	9nC @ 10V	250pF @ 25V	10V	±20V
	IXTP08N100P	RFQ VIEW	PDF RFQ	753 In-stock	IXYS	MOSFET N-CH 1000V 800MA TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	42W (Tc)	N-Channel	-	1000V	800mA (Tc)	20 Ohm @ 500mA, 10V	4V @ 50µA	11.3nC @ 10V	240pF @ 25V	10V	±20V
	IXFP8N50PM	RFQ VIEW	PDF RFQ	3,391 In-stock	IXYS	MOSFET N-CH 500V 4.4A TO-220		HiPerFET™, PolarHT™	Last Time Buy	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	42W (Tc)	N-Channel	-	500V	4.4A (Tc)	800 mOhm @ 4A, 10V	5.5V @ 1mA	20nC @ 10V	1050pF @ 25V	10V	±30V
	IXFP5N100PM	RFQ VIEW	PDF RFQ	2,027 In-stock	IXYS	MOSFET N-CH 1000V 2.3A TO-220		HiPerFET™, PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Isolated Tab	TO-220 Isolated Tab	42W (Tc)	N-Channel	-	1000V	2.3A (Tc)	2.8 Ohm @ 2.5A, 10V	6V @ 250µA	33.4nC @ 10V	1830pF @ 25V	10V	±30V
	IXTP06N120P	RFQ VIEW	PDF RFQ	1,647 In-stock	IXYS	MOSFET N-CH 1200V 600MA TO-220		PolarVHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	42W (Tc)	N-Channel	-	1200V	600mA (Tc)	32 Ohm @ 500mA, 10V	4.5V @ 50µA	13.3nC @ 10V	270pF @ 25V	10V	±20V

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