Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP3N110
RFQ
VIEW
RFQ
951
In-stock
IXYS MOSFET N-CH 1100V 3A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 150W (Tc) N-Channel 1100V 3A (Tc) 4 Ohm @ 1.5A, 10V 5V @ 250µA 42nC @ 10V 1350pF @ 25V 10V ±20V
IXFP4N100P
RFQ
VIEW
RFQ
1,137
In-stock
IXYS MOSFET N-CH 1000V 4A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 150W (Tc) N-Channel 1000V 4A (Tc) 3.3 Ohm @ 2A, 10V 5V @ 250µA 26nC @ 10V 1456pF @ 25V 10V ±20V
IXFP8N65X2
RFQ
VIEW
RFQ
1,777
In-stock
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220 150W (Tc) N-Channel 650V 8A (Tc) 450 mOhm @ 4A, 10V 5V @ 250µA 11nC @ 10V 790pF @ 25V 10V ±30V
IXTP8N65X2
RFQ
VIEW
RFQ
1,574
In-stock
IXYS MOSFET N-CH 650V 8A X2 TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220 150W (Tc) N-Channel 650V 8A (Tc) 500 mOhm @ 4A, 10V 5V @ 250µA 12nC @ 10V 800pF @ 25V 10V ±30V
IXTP8N70X2
RFQ
VIEW
RFQ
1,594
In-stock
IXYS MOSFET N-CHANNEL 700V 8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 150W (Tc) N-Channel 700V 8A (Tc) 500 mOhm @ 500mA, 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V 10V ±30V