Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTU1R4N60P
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649
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IXYS MOSFET N-CH 600V 1.4A TO251 PolarHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 50W (Tc) N-Channel - 600V 1.4A (Tc) 9 Ohm @ 700mA, 10V 5.5V @ 25µA 5.2nC @ 10V 140pF @ 25V 10V ±30V
IXTU01N100
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1,804
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IXYS MOSFET N-CH 1KV .1A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 25W (Tc) N-Channel - 1000V 100mA (Tc) 80 Ohm @ 100mA, 10V 4.5V @ 25µA 6.9nC @ 10V 54pF @ 25V 10V ±20V
IXTU01N80
RFQ
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RFQ
2,249
In-stock
IXYS MOSFET N-CH 800V 0.1A TO-251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 25W (Tc) N-Channel - 800V 100mA (Tc) 50 Ohm @ 100mA, 10V 4.5V @ 25µA 8nC @ 10V 60pF @ 25V 10V ±20V
IXTU05N100
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RFQ
3,382
In-stock
IXYS MOSFET N-CH 1000V 750MA TO-251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 40W (Tc) N-Channel - 1000V 750mA (Tc) 17 Ohm @ 375mA, 10V 4.5V @ 250µA 7.8nC @ 10V 260pF @ 25V 10V ±30V
IXTU2N80P
RFQ
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RFQ
2,282
In-stock
IXYS MOSFET N-CH TO-251 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 70W (Tc) N-Channel - 800V 2A (Tc) 6 Ohm @ 1A, 10V 5.5V @ 50µA 10.6nC @ 10V 440pF @ 25V 10V ±30V