- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,219
In-stock
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IXYS | MOSFET N-CH 1000V 21A PLUS 247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 500W (Tc) | N-Channel | - | 1000V | 21A (Tc) | 500 mOhm @ 10.5A, 10V | 5.5V @ 4mA | 170nC @ 10V | 6900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,081
In-stock
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IXYS | MOSFET N-CH 900V 12A PLUS247 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 300W (Tc) | N-Channel | - | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
1,368
In-stock
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IXYS | MOSFET N-CH 650V 100A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 1040W (Tc) | N-Channel | - | 650V | 100A (Tc) | 30 mOhm @ 50A, 10V | 5.5V @ 4mA | 180nC @ 10V | 11300pF @ 25V | 10V | ±30V | |||
