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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP12N50PM	RFQ VIEW	PDF RFQ	2,159 In-stock	IXYS	MOSFET N-CH 500V 6A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	-	500V	6A (Tc)	500 mOhm @ 6A, 10V	5.5V @ 250µA	29nC @ 10V	1830pF @ 25V	10V	±30V
	IXFP12N50PM	RFQ VIEW	PDF RFQ	1,463 In-stock	IXYS	MOSFET N-CH 500V 6A TO-220		HiPerFET™, PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	-	500V	6A (Tc)	500 mOhm @ 6A, 10V	5.5V @ 1mA	29nC @ 10V	1830pF @ 25V	10V	±30V
	IXFP6N120P	RFQ VIEW	PDF RFQ	766 In-stock	IXYS	MOSFET N-CH 1200V 6A TO-220AB		HiPerFET™, PolarP2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	250W (Tc)	N-Channel	-	1200V	6A (Tc)	2.4 Ohm @ 500mA, 10V	5V @ 1mA	92nC @ 10V	2830pF @ 25V	10V	±30V
	IXTP6N50D2	RFQ VIEW	PDF RFQ	3,586 In-stock	IXYS	MOSFET N-CH 500V 6A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	Depletion Mode	500V	6A (Tc)	500 mOhm @ 3A, 0V	-	96nC @ 5V	2800pF @ 25V	-	±20V
	IXTP6N100D2	RFQ VIEW	PDF RFQ	1,002 In-stock	IXYS	MOSFET N-CH 1000V 6A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	Depletion Mode	1000V	6A (Tc)	2.2 Ohm @ 3A, 0V	-	95nC @ 5V	2650pF @ 25V	-	±20V

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