Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,700
In-stock
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247 180W (Tc) N-Channel 700V 12A (Tc) 300 mOhm @ 6A, 10V 4.5V @ 250µA 19nC @ 10V 960pF @ 25V 10V ±30V
IXTH12N65X2
RFQ
VIEW
RFQ
2,547
In-stock
IXYS MOSFET N-CH 650V 12A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 180W (Tc) N-Channel 650V 12A (Tc) 300 mOhm @ 6A, 10V 5V @ 250µA 17nC @ 10V 1100pF @ 25V 10V ±30V