Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXFX74N50P2
RFQ
VIEW
RFQ
3,808
In-stock
IXYS MOSFET N-CH 500V 74A PLUS247 HiPerFET™, PolarHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1400W (Tc) N-Channel - 500V 74A (Tc) 77 mOhm @ 500mA, 10V 5V @ 4mA 165nC @ 10V 9900pF @ 25V 10V ±30V
IXFX260N17T
RFQ
VIEW
RFQ
973
In-stock
IXYS MOSFET N-CH 170V 260A PLUS247 GigaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1670W (Tc) N-Channel - 170V 260A (Tc) 6.5 mOhm @ 60A, 10V 5V @ 8mA 400nC @ 10V 24000pF @ 25V 10V ±20V
IXFX210N17T
RFQ
VIEW
RFQ
3,250
In-stock
IXYS MOSFET N-CH 170V 210A PLUS247 GigaMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1150W (Tc) N-Channel - 170V 210A (Tc) 7.5 mOhm @ 60A, 10V 5V @ 4mA 285nC @ 10V 18800pF @ 25V 10V ±20V
IXFX66N50Q2
RFQ
VIEW
RFQ
2,900
In-stock
IXYS MOSFET N-CH 500V 66A PLUS247 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 735W (Tc) N-Channel - 500V 66A (Tc) 80 mOhm @ 500mA, 10V 4.5V @ 8mA 200nC @ 10V 9125pF @ 25V 10V ±30V