Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP34N65X2
RFQ
VIEW
RFQ
3,080
In-stock
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 540W (Tc) N-Channel 650V 34A (Tc) 96 mOhm @ 17A, 10V 5V @ 250µA 54nC @ 10V 3000pF @ 25V 10V ±30V
IXTP24N65X2
RFQ
VIEW
RFQ
3,072
In-stock
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 390W (Tc) N-Channel 650V 24A (Tc) 145 mOhm @ 12A, 10V 5V @ 250µA 36nC @ 10V 2060pF @ 25V 10V ±30V
IXFP12N65X2
RFQ
VIEW
RFQ
3,071
In-stock
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel 650V 12A (Tc) 310 mOhm @ 6A, 10V 5V @ 250µA 18.5nC @ 10V 1134pF @ 25V 10V ±30V
IXFP8N65X2
RFQ
VIEW
RFQ
1,777
In-stock
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel 650V 8A (Tc) 450 mOhm @ 4A, 10V 5V @ 250µA 11nC @ 10V 790pF @ 25V 10V ±30V