Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTQ30N50L2
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IXYS MOSFET N-CH 500V 30A TO-3P Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 400W (Tc) N-Channel - 500V 30A (Tc) 200 mOhm @ 15A, 10V 4.5V @ 250µA 240nC @ 10V 8100pF @ 25V 10V ±20V
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IXYS MOSFET N-CH 500V 30A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 400W (Tc) N-Channel - 500V 30A (Tc) 200 mOhm @ 15A, 10V 4.5V @ 250µA 240nC @ 10V 10200pF @ 25V 10V ±20V
IXTH30N50L2
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IXYS MOSFET N-CH 500V 30A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 400W (Tc) N-Channel - 500V 30A (Tc) 200 mOhm @ 15A, 10V 4.5V @ 250µA 240nC @ 10V 8100pF @ 25V 10V ±20V