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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFK80N50P	RFQ VIEW	PDF RFQ	3,584 In-stock	IXYS	MOSFET N-CH 500V 80A TO-264		HiPerFET™, PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1040W (Tc)	N-Channel	-	500V	80A (Tc)	65 mOhm @ 40A, 10V	5V @ 8mA	197nC @ 10V	12700pF @ 25V	10V	±30V
	IXFK80N50Q3	RFQ VIEW	PDF RFQ	1,926 In-stock	IXYS	MOSFET N-CH 500V 80A TO-264		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1250W (Tc)	N-Channel	-	500V	80A (Tc)	65 mOhm @ 40A, 10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	10V	±30V
	IXFX80N50Q3	RFQ VIEW	PDF RFQ	3,367 In-stock	IXYS	MOSFET N-CH 500V 80A PLUS247		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1250W (Tc)	N-Channel	-	500V	80A (Tc)	65 mOhm @ 40A, 10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	10V	±30V
	IXFX80N50P	RFQ VIEW	PDF RFQ	1,370 In-stock	IXYS	MOSFET N-CH 500V 80A PLUS247		HiPerFET™, PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1040W (Tc)	N-Channel	-	500V	80A (Tc)	65 mOhm @ 40A, 10V	5V @ 8mA	197nC @ 10V	12700pF @ 25V	10V	±30V

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