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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTH52P10P	RFQ VIEW	PDF RFQ	1,657 In-stock	IXYS	MOSFET P-CH 100V 52A TO-247		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	P-Channel	-	100V	52A (Tc)	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	2845pF @ 25V	10V	±20V
	IXFX98N50P3	RFQ VIEW	PDF RFQ	2,261 In-stock	IXYS	MOSFET N-CH 500V 98A PLUS247		HiPerFET™, Polar3™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1300W (Tc)	N-Channel	-	500V	98A (Tc)	50 mOhm @ 500mA, 10V	5V @ 8mA	197nC @ 10V	13100pF @ 25V	10V	±30V
	IXFK98N50P3	RFQ VIEW	PDF RFQ	777 In-stock	IXYS	MOSFET N-CH 500V 98A TO264		HiPerFET™, Polar3™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1300W (Tc)	N-Channel	-	500V	98A (Tc)	50 mOhm @ 500mA, 10V	5V @ 8mA	197nC @ 10V	13100pF @ 25V	10V	±30V
	IXTP52P10P	RFQ VIEW	PDF RFQ	1,843 In-stock	IXYS	MOSFET P-CH 100V 52A TO-220		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	P-Channel	-	100V	52A (Tc)	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	2845pF @ 25V	10V	±20V
	IXTQ52P10P	RFQ VIEW	PDF RFQ	2,043 In-stock	IXYS	MOSFET P-CH 100V 52A TO-3P		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	300W (Tc)	P-Channel	-	100V	52A (Tc)	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	2845pF @ 25V	10V	±20V

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