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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTQ26N60P	RFQ VIEW	PDF RFQ	2,096 In-stock	IXYS	MOSFET N-CH 600V 26A TO-3P		PolarHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	460W (Tc)	N-Channel	-	600V	26A (Tc)	270 mOhm @ 500mA, 10V	5V @ 250µA	72nC @ 10V	4150pF @ 25V	10V	±30V
	IXTQ26P20P	RFQ VIEW	PDF RFQ	1,899 In-stock	IXYS	MOSFET P-CH 200V 26A TO-3P		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	300W (Tc)	P-Channel	-	200V	26A (Tc)	170 mOhm @ 13A, 10V	4V @ 250µA	56nC @ 10V	2740pF @ 25V	10V	±20V
	IXFQ26N50P3	RFQ VIEW	PDF RFQ	3,667 In-stock	IXYS	MOSFET N-CH 500V 26A TO-3P		HiPerFET™, Polar3™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	500W (Tc)	N-Channel	-	500V	26A (Tc)	230 mOhm @ 13A, 10V	5V @ 4mA	42nC @ 10V	2220pF @ 25V	10V	±30V
	IXFQ26N50	RFQ VIEW	PDF RFQ	2,906 In-stock	IXYS	MOSFET N-CH 500V 26A TO-30		-	Active	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-3P-3, SC-65-3	TO-3P	-	N-Channel	-	500V	26A (Tc)	-	-	-	-	-	-
	IXTQ26N50P	RFQ VIEW	PDF RFQ	3,088 In-stock	IXYS	MOSFET N-CH 500V 26A TO-3P		PolarHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	400W (Tc)	N-Channel	-	500V	26A (Tc)	230 mOhm @ 13A, 10V	5.5V @ 250µA	65nC @ 10V	3600pF @ 25V	10V	±30V

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