Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTQ80N28T
RFQ
VIEW
RFQ
1,603
In-stock
IXYS MOSFET N-CH 280V 80A TO-3P - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 500W (Tc) N-Channel 280V 80A (Tc) 49 mOhm @ 500mA, 10V 5V @ 1mA 115nC @ 10V 5000pF @ 25V 10V ±30V
IXTH80N65X2
RFQ
VIEW
RFQ
1,372
In-stock
IXYS MOSFET N-CH 650V 80A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel 650V 80A (Tc) 40 mOhm @ 40A, 10V 4.5V @ 4mA 144nC @ 10V 7753pF @ 25V 10V ±30V