Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH150N17T2
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1,844
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IXYS MOSFET N-CH 175V 150A TO-247 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 880W (Tc) N-Channel - 175V 150A (Tc) 12 mOhm @ 75A, 10V 4.5V @ 1mA 233nC @ 10V 14600pF @ 25V 10V ±20V
IXFH160N15T2
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RFQ
1,748
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IXYS MOSFET N-CH 150V 160A TO-247 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 880W (Tc) N-Channel - 150V 160A (Tc) 9 mOhm @ 80A, 10V 4.5V @ 1mA 253nC @ 10V 15000pF @ 25V 10V ±20V
IXFA130N10T2
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RFQ
1,322
In-stock
IXYS MOSFET N-CH 100V 130A TO-263AA GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 65A, 10V 4.5V @ 1mA 130nC @ 10V 6600pF @ 25V 10V ±20V
IXFP130N10T2
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RFQ
1,179
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IXYS MOSFET N-CH 100V 130A TO-220 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 65A, 10V 4.5V @ 1mA 130nC @ 10V 6600pF @ 25V 10V ±20V