Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,185
In-stock
IXYS MOSFET N-CH 85V 80A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 230W (Tc) N-Channel - 85V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,037
In-stock
IXYS MOSFET N-CH 80V 80A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 230W (Tc) N-Channel - 80V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 4mA 180nC @ 10V 4800pF @ 25V 10V ±20V
IXFH76N07-11
RFQ
VIEW
RFQ
1,641
In-stock
IXYS MOSFET N-CH 70V 76A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 360W (Tc) N-Channel - 70V 76A (Tc) 11 mOhm @ 40A, 10V 3.4V @ 4mA 240nC @ 10V 4400pF @ 25V 10V ±20V