Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH130N15T
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RFQ
3,038
In-stock
IXYS MOSFET N-CH 150V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel 150V 130A (Tc) 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V 9800pF @ 25V 10V ±30V
IXTH102N20T
RFQ
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RFQ
1,617
In-stock
IXYS MOSFET N-CH 200V 102A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel 200V 102A (Tc) 23 mOhm @ 500mA, 10V 4.5V @ 1mA 114nC @ 10V 6800pF @ 25V 10V ±30V
IXTH90N15T
RFQ
VIEW
RFQ
2,451
In-stock
IXYS MOSFET N-CH 150V 90A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 455W (Tc) N-Channel 150V 90A (Tc) 20 mOhm @ 45A, 10V 4.5V @ 1mA 80nC @ 10V 4100pF @ 25V 10V ±30V
IXTH110N25T
RFQ
VIEW
RFQ
3,907
In-stock
IXYS MOSFET N-CH 250V 110A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 694W (Tc) N-Channel 250V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 1mA 157nC @ 10V 9400pF @ 25V 10V ±20V