Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH12N120
RFQ
VIEW
RFQ
1,744
In-stock
IXYS MOSFET N-CH 1200V 12A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 500W (Tc) N-Channel - 1200V 12A (Tc) 1.4 Ohm @ 6A, 10V 5V @ 250µA 95nC @ 10V 3400pF @ 25V 10V ±30V
IXTH12N150
RFQ
VIEW
RFQ
2,661
In-stock
IXYS MOSFET N-CH 1500V 12A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 890W (Tc) N-Channel - 1500V 12A (Tc) 2 Ohm @ 6A, 10V 4.5V @ 250µA 106nC @ 10V 3720pF @ 25V 10V ±30V
IXTH12N100L
RFQ
VIEW
RFQ
1,905
In-stock
IXYS MOSFET N-CH 1000V 12A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 400W (Tc) N-Channel - 1000V 12A (Tc) 1.3 Ohm @ 500mA, 20V 5V @ 250µA 155nC @ 20V 2500pF @ 25V 20V ±30V
IXTH12N100
RFQ
VIEW
RFQ
757
In-stock
IXYS MOSFET N-CH 1000V 12A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 1000V 12A (Tc) 1.05 Ohm @ 6A, 10V 4.5V @ 250µA 170nC @ 10V 4000pF @ 25V 10V ±20V
IXTH12N100Q
RFQ
VIEW
RFQ
3,655
In-stock
IXYS MOSFET N-CH 1000V 12A TO-247 - Active Tube MOSFET (Metal Oxide) - Through Hole TO-247-3 TO-247 (IXTH) - N-Channel - 1000V 12A (Tc) - - - - - -
IXTH12N90
RFQ
VIEW
RFQ
2,068
In-stock
IXYS MOSFET N-CH 900V 12A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 900V 12A (Tc) 900 mOhm @ 6A, 10V 4.5V @ 250µA 170nC @ 10V 4500pF @ 25V 10V ±20V