Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH220N055T
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RFQ
2,953
In-stock
IXYS MOSFET N-CH 55V 220A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 55V 220A (Tc) 4 mOhm @ 25A, 10V 4V @ 250µA 158nC @ 10V 7200pF @ 25V 10V ±20V
IXTH200N075T
RFQ
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RFQ
2,703
In-stock
IXYS MOSFET N-CH 75V 200A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 75V 200A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 160nC @ 10V 6800pF @ 25V 10V ±20V
IXTH180N085T
RFQ
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RFQ
2,732
In-stock
IXYS MOSFET N-CH 85V 180A TO-247 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 85V 180A (Tc) 5.5 mOhm @ 25A, 10V 4V @ 250µA 170nC @ 10V 7500pF @ 25V 10V ±20V
IXTH160N10T
RFQ
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RFQ
3,606
In-stock
IXYS MOSFET N-CH 100V 160A TO-247 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V