Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH26N60P
RFQ
VIEW
RFQ
1,892
In-stock
IXYS MOSFET N-CH 600V 26A TO-247 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) N-Channel - 600V 26A (Tc) 270 mOhm @ 500mA, 10V 5V @ 250µA 72nC @ 10V 4150pF @ 25V 10V ±30V
IXTH30N50P
RFQ
VIEW
RFQ
2,894
In-stock
IXYS MOSFET N-CH 500V 30A TO-247 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) N-Channel - 500V 30A (Tc) 200 mOhm @ 15A, 10V 5V @ 250µA 70nC @ 10V 4150pF @ 25V 10V ±30V
IXTH76N25T
RFQ
VIEW
RFQ
3,666
In-stock
IXYS MOSFET N-CH 250V 76A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) N-Channel - 250V 76A (Tc) 39 mOhm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 4500pF @ 25V 10V ±30V
IXTH16P60P
RFQ
VIEW
RFQ
1,708
In-stock
IXYS MOSFET P-CH 600V 16A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) P-Channel - 600V 16A (Tc) 720 mOhm @ 500mA, 10V 4.5V @ 250µA 92nC @ 10V 5120pF @ 25V 10V ±20V
IXTH20P50P
RFQ
VIEW
RFQ
3,258
In-stock
IXYS MOSFET P-CH 500V 20A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) P-Channel - 500V 20A (Tc) 450 mOhm @ 10A, 10V 4V @ 250µA 103nC @ 10V 5120pF @ 25V 10V ±20V