Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH32P20T
RFQ
VIEW
RFQ
2,014
In-stock
IXYS MOSFET P-CH 200V 32A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel 200V 32A (Tc) 130 mOhm @ 16A, 10V 4V @ 250µA 185nC @ 10V 14500pF @ 25V 10V ±15V
IXTH16P20
RFQ
VIEW
RFQ
3,025
In-stock
IXYS MOSFET P-CH 200V 16A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel 200V 16A (Tc) 160 mOhm @ 500mA, 10V 5V @ 250µA 95nC @ 10V 2800pF @ 25V 10V ±20V
IXTH50N20
RFQ
VIEW
RFQ
3,538
In-stock
IXYS MOSFET N-CH 200V 50A TO-247AD MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 250µA 220nC @ 10V 4600pF @ 25V 10V ±20V
IXTH26P20P
RFQ
VIEW
RFQ
1,930
In-stock
IXYS MOSFET P-CH 200V 26A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel 200V 26A (Tc) 170 mOhm @ 13A, 10V 4V @ 250µA 56nC @ 10V 2740pF @ 25V 10V ±20V
IXTH24P20
RFQ
VIEW
RFQ
2,516
In-stock
IXYS MOSFET P-CH 200V 24A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel 200V 24A (Tc) 150 mOhm @ 500mA, 10V 5V @ 250µA 150nC @ 10V 4200pF @ 25V 10V ±20V