Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD50N06S4L12ATMA1
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1,711
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Infineon Technologies MOSFET N-CH 60V 50A TO252-3-11 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 - 50W (Tc) N-Channel - 60V 50A (Tc) 12 mOhm @ 50A, 10V 2.2V @ 20µA 40nC @ 10V 2890pF @ 25V 4.5V, 10V ±16V
IPD50N03S4L06ATMA1
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1,362
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Infineon Technologies MOSFET N-CH 30V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 56W (Tc) N-Channel - 30V 50A (Tc) 5.5 mOhm @ 50A, 10V 2.2V @ 20µA 31nC @ 10V 2330pF @ 25V 4.5V, 10V ±16V
IPC50N04S5L5R5ATMA1
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RFQ
2,583
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Infineon Technologies N-CHANNEL_30/40V Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-33 42W (Tc) N-Channel - 40V 50A (Tc) 5.5 mOhm @ 25A, 10V 2V @ 13µA 23nC @ 10V 1209pF @ 25V 4.5V, 10V ±16V
IRLR3636TRPBF
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703
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Infineon Technologies MOSFET N-CH 60V 50A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 143W (Tc) N-Channel - 60V 50A (Tc) 6.8 mOhm @ 50A, 10V 2.5V @ 100µA 49nC @ 4.5V 3779pF @ 50V 4.5V, 10V ±16V
IPD50N06S4L12ATMA2
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1,157
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Infineon Technologies MOSFET N-CH 60V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 50W (Tc) N-Channel - 60V 50A (Tc) 12 mOhm @ 50A, 10V 2.2V @ 20µA 40nC @ 10V 2890pF @ 25V 4.5V, 10V ±16V
IPD50P04P4L11ATMA1
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RFQ
677
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Infineon Technologies MOSFET P-CH 40V 50A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 58W (Tc) P-Channel - 40V 50A (Tc) 10.6 mOhm @ 50A, 10V 2.2V @ 85µA 59nC @ 10V 3900pF @ 25V 4.5V, 10V ±16V