- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,259
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 36W (Tc) | N-Channel | - | 60V | 30A (Tc) | 23 mOhm @ 30A, 10V | 2.2V @ 10µA | 21nC @ 10V | 1560pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
704
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 30A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,847
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 55V | 30A (Tc) | 14 mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | 1870pF @ 25V | 5V, 10V | ±16V | |||
|
|
VIEW |
1,487
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 30V | 30A (Tc) | 13.6 mOhm @ 30A, 10V | 2.2V @ 10µA | 14nC @ 10V | 980pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,423
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 30V | 30A (Tc) | 9 mOhm @ 30A, 10V | 2.2V @ 13µA | 20nC @ 10V | 1520pF @ 15V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,804
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
2,569
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
