Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB50N10S3L16ATMA1
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1,978
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Infineon Technologies MOSFET N-CH 100V 50A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 100W (Tc) N-Channel - 100V 50A (Tc) 15.4 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
IPL65R070C7AUMA1
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3,934
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Infineon Technologies MOSFET N-CH 4VSON CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 169W (Tc) N-Channel - 650V 28A (Tc) 70 mOhm @ 8.5A, 10V 4V @ 850µA 64nC @ 10V 3020pF @ 100V 10V ±20V
IPB50R140CPATMA1
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3,985
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Infineon Technologies MOSFET N-CH 550V 23A TO-263 CoolMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 192W (Tc) N-Channel - 550V 23A (Tc) 140 mOhm @ 14A, 10V 3.5V @ 930µA 64nC @ 10V 2540pF @ 100V 10V ±20V
IPD50N10S3L16ATMA1
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1,969
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Infineon Technologies MOSFET N-CH 100V 50A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) N-Channel - 100V 50A (Tc) 15 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
BSC010NE2LSATMA1
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2,917
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Infineon Technologies MOSFET N-CH 25V 39A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 96W (Tc) N-Channel - 25V 39A (Ta), 100A (Tc) 1 mOhm @ 30A, 10V 2V @ 250µA 64nC @ 10V 4700pF @ 12V 4.5V, 10V ±20V
BSZ040N04LSGATMA1
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2,548
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Infineon Technologies MOSFET N-CH 40V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 69W (Tc) N-Channel - 40V 18A (Ta), 40A (Tc) 4 mOhm @ 20A, 10V 2V @ 36µA 64nC @ 10V 5100pF @ 20V 4.5V, 10V ±20V
BSC035N04LSGATMA1
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2,598
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 40V 21A (Ta), 100A (Tc) 3.5 mOhm @ 50A, 10V 2V @ 36µA 64nC @ 10V 5100pF @ 20V 4.5V, 10V ±20V