- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,815
In-stock
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Infineon Technologies | MOSFET N-CH 30V 13.6A 8-SO | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 13.6A (Ta) | 12.5 mOhm @ 10A, 4.5V | 1V @ 250µA | 14nC @ 5V | 1010pF @ 15V | 4.5V | ±20V | |||
|
VIEW |
3,060
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | |||
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|
VIEW |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V | |||
|
VIEW |
1,765
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.9A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
771
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | |||
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|
VIEW |
2,697
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | |||
