- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
647
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 170A WDSON-2 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 25V | 37A (Ta), 170A (Tc) | 1.2 mOhm @ 30A, 10V | 2V @ 250µA | 67nC @ 10V | 4900pF @ 12V | 4.5V, 10V | ±20V | |||
|
VIEW |
651
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TSDSON-8 | 2.1W (Ta), 69W (Tc) | N-Channel | - | 60V | 14A (Ta), 20A (Tc) | 6.7 mOhm @ 20A, 10V | 2.2V @ 35µA | 67nC @ 10V | 5100pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,592
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,391
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 129A PGVSON-4 | CoolMOS™ CFD7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 189W (Tc) | N-Channel | - | 650V | 33A (Tc) | 75 mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | 2721pF @ 400V | 10V | ±20V | |||
|
|
VIEW |
1,144
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 164W (Tc) | N-Channel | - | 650V | 48A (Tc) | 60 mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | 2895pF @ 400V | 10V | ±20V | |||
|
|
VIEW |
1,564
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,241
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 60V | 15A (Ta), 50A (Tc) | 6.7 mOhm @ 50A, 10V | 2.2V @ 35µA | 67nC @ 10V | 5100pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,850
In-stock
|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 201W (Tc) | N-Channel | - | 650V | 41A (Tc) | 65 mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | 2895pF @ 400V | 10V | ±20V | |||
