- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,555
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
|
VIEW |
882
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,426
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
739
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,575
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 50A TO263-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 56W (Tc) | N-Channel | - | 40V | 50A (Tc) | 7.5 mOhm @ 50A, 10V | 2V @ 20µA | 36nC @ 10V | 2800pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
629
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 17A TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 101W (Tc) | N-Channel | Super Junction | 800V | 17A (Tc) | 280 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | 10V | ±20V | |||
|
|
VIEW |
919
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,781
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,777
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.1W (Ta), 8.3W (Tc) | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
995
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 71W (Tc) | N-Channel | - | 60V | 50A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | 10V | ±20V | |||
|
VIEW |
2,454
In-stock
|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 111W (Tc) | N-Channel | - | 650V | 27A (Tc) | 125 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | |||
|
|
VIEW |
2,749
In-stock
|
Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 95W (Tc) | N-Channel | - | 650V | 26A (Tc) | 120 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | |||
|
VIEW |
3,862
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 22A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | - | 25V | 22A (Ta), 40A (Tc) | 1.8 mOhm @ 20A, 10V | 2V @ 250µA | 36nC @ 10V | 2500pF @ 12V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,511
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 36nC @ 10V | 2500pF @ 12V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,073
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 3.6W (Ta), 89W (Tc) | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | |||
