- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,855
In-stock
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Infineon Technologies | MOSFET N-CH 34V 49A 8TDSON | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 30W (Tc) | N-Channel | - | 34V | 14A (Ta), 49A (Tc) | 8 mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | 1220pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,644
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
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VIEW |
2,202
In-stock
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Infineon Technologies | MOSFET N-CH 200V 1.2A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 1.2A (Ta) | 730 mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±30V | |||
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VIEW |
782
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
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VIEW |
3,627
In-stock
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Infineon Technologies | MOSFET N-CH 30V 35A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | N-Channel | - | 30V | 35A (Tc) | 10.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | 1500pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
639
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
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VIEW |
2,669
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,363
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 98 mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,487
In-stock
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Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 30V | 30A (Tc) | 13.6 mOhm @ 30A, 10V | 2.2V @ 10µA | 14nC @ 10V | 980pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,019
In-stock
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Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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VIEW |
2,111
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
948
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,107
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
