- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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629
In-stock
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Infineon Technologies | MOSFET N-CH 20V 75A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | - | 20V | 75A (Tc) | 9.5 mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | 10V | ±20V | |||
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VIEW |
1,128
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A D2PAK | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
3,326
In-stock
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Infineon Technologies | MOSFET N-CH 40V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | - | 40V | 42A (Tc) | 9 mOhm @ 42A, 10V | 4V @ 250µA | 45nC @ 10V | 1510pF @ 25V | 10V | ±20V |