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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	BSP135L6433HTMA1	RFQ VIEW	PDF RFQ	1,822 In-stock	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	600V	120mA (Ta)	45 Ohm @ 120mA, 10V	1V @ 94µA	4.9nC @ 5V	146pF @ 25V	0V, 10V	±20V
	BSP149L6327HTSA1	RFQ VIEW	PDF RFQ	3,060 In-stock	Infineon Technologies	MOSFET N-CH 200V 660MA SOT-223		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	200V	660mA (Ta)	1.8 Ohm @ 660mA, 10V	1V @ 400µA	14nC @ 5V	430pF @ 25V	0V, 10V	±20V
	BSP129E6327	RFQ VIEW	PDF RFQ	877 In-stock	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223		SIPMOS®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	240V	350mA (Ta)	6 Ohm @ 350mA, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	0V, 10V	±20V
	BSP129H6906XTSA1	RFQ VIEW	PDF RFQ	3,074 In-stock	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223		SIPMOS™	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	240V	350mA (Ta)	6 Ohm @ 350mA, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	0V, 10V	±20V
	BSP129E6327T	RFQ VIEW	PDF RFQ	1,753 In-stock	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223		SIPMOS®	Discontinued at Digi-Key	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	240V	350mA (Ta)	6 Ohm @ 350mA, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	0V, 10V	±20V
	BSP135H6327XTSA1	RFQ VIEW	PDF RFQ	3,632 In-stock	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223		SIPMOS®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4	1.8W (Ta)	N-Channel	Depletion Mode	600V	120mA (Ta)	45 Ohm @ 120mA, 10V	1V @ 94µA	4.9nC @ 5V	146pF @ 25V	0V, 10V	±20V
	BSP129H6327XTSA1	RFQ VIEW	PDF RFQ	3,998 In-stock	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223		SIPMOS®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	240V	350mA (Ta)	6 Ohm @ 350mA, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	0V, 10V	±20V
	BSP149H6327XTSA1	RFQ VIEW	PDF RFQ	771 In-stock	Infineon Technologies	MOSFET N-CH 200V 660MA SOT-223		SIPMOS®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	200V	660mA (Ta)	1.8 Ohm @ 660mA, 10V	1V @ 400µA	14nC @ 5V	430pF @ 25V	0V, 10V	±20V
	BSP149H6906XTSA1	RFQ VIEW	PDF RFQ	2,697 In-stock	Infineon Technologies	MOSFET N-CH 200V 660MA SOT-223		SIPMOS®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	Depletion Mode	200V	660mA (Ta)	1.8 Ohm @ 660mA, 10V	1V @ 400µA	14nC @ 5V	430pF @ 25V	0V, 10V	±20V

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