- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,822
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | 146pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
2,194
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,313
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,222
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,632
In-stock
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Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | 146pF @ 25V | 0V, 10V | ±20V | |||
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|
VIEW |
1,133
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
