Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 40V 100A 8TDSON-34 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-34 75W (Tc) N-Channel - 40V 100A (Tc) 2.8 mOhm @ 50A, 10V 3.4V @ 30µA 45nC @ 10V 2600pF @ 25V 7V, 10V ±20V
BSC100N06LS3GATMA1
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1,995
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Infineon Technologies MOSFET N-CH 60V 50A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel - 60V 12A (Ta), 50A (Tc) 10 mOhm @ 50A, 10V 2.2V @ 23µA 45nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V
BSZ120P03NS3GATMA1
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1,755
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Infineon Technologies MOSFET P-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 52W (Tc) P-Channel - 30V 11A (Ta), 40A (Tc) 12 mOhm @ 20A, 10V 3.1V @ 73µA 45nC @ 10V 3360pF @ 15V 6V, 10V ±25V
BSZ0901NSATMA1
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3,519
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Infineon Technologies MOSFET N-CH 30V S308 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 30V 22A (Ta), 40A (Tc) 2 mOhm @ 20A, 10V 2.2V @ 250µA 45nC @ 10V 2850pF @ 15V 4.5V, 10V ±20V