- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,887
In-stock
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Infineon Technologies | MOSFET N CH 100V 19A 8QFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | - | 100V | 19A (Ta) | 5.2 mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | 2320pF @ 50V | 10V | ±20V | |||
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VIEW |
2,998
In-stock
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Infineon Technologies | MOSFET N-CH 25V 41A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.6W (Ta), 89W (Tc) | N-Channel | - | 25V | 41A (Ta) | 1.35 mOhm @ 50A, 10V | 2.1V @ 100µA | 54nC @ 10V | 3420pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
3,731
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 8.3W (Tc) | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | |||
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VIEW |
2,040
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | |||
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VIEW |
1,810
In-stock
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Infineon Technologies | MOSFET N-CH 80V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 104W (Tc) | N-Channel | - | 80V | 100A (Tc) | 4 mOhm @ 50A, 10V | 3.8V @ 67µA | 54nC @ 10V | 3900pF @ 40V | 6V, 10V | ±20V |