Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH7185TRPBF
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3,887
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Infineon Technologies MOSFET N CH 100V 19A 8QFN FASTIRFET™, HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 160W (Tc) N-Channel - 100V 19A (Ta) 5.2 mOhm @ 50A, 10V 3.6V @ 150µA 54nC @ 10V 2320pF @ 50V 10V ±20V
IRFH4213TRPBF
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2,998
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Infineon Technologies MOSFET N-CH 25V 41A 8PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 89W (Tc) N-Channel - 25V 41A (Ta) 1.35 mOhm @ 50A, 10V 2.1V @ 100µA 54nC @ 10V 3420pF @ 13V 4.5V, 10V ±20V
IRFH5020TR2PBF
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RFQ
3,731
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Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 8.3W (Tc) N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V
IRFH5020TRPBF
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RFQ
2,040
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Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V
BSC040N08NS5ATMA1
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RFQ
1,810
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Infineon Technologies MOSFET N-CH 80V 100A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 104W (Tc) N-Channel - 80V 100A (Tc) 4 mOhm @ 50A, 10V 3.8V @ 67µA 54nC @ 10V 3900pF @ 40V 6V, 10V ±20V