- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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632
In-stock
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Infineon Technologies | MOSFET N-CH 75V 14A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 75V | 14A (Ta), 75A (Tc) | 8.5 mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | 3110pF @ 25V | 10V | ±20V | |||
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VIEW |
2,794
In-stock
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Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 96W (Tc) | N-Channel | - | 30V | 37A (Ta), 100A (Tc) | 1.1 mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4700pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 139W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4 mOhm @ 50A, 10V | 3.8V @ 95µA | 72nC @ 10V | 5300pF @ 50V | 6V, 10V | ±20V | |||
