Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC600N25NS3GATMA1
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1,965
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Infineon Technologies MOSFET N-CH 250V 25A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 125W (Tc) N-Channel - 250V 25A (Tc) 60 mOhm @ 25A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V
BSC320N20NS3GATMA1
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640
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Infineon Technologies MOSFET N-CH 200V 36A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 125W (Tc) N-Channel - 200V 36A (Tc) 32 mOhm @ 36A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V
BSC072N08NS5ATMA1
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825
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Infineon Technologies MOSFET N-CH 80V 74A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 80V 74A (Tc) 7.2 mOhm @ 37A, 10V 3.8V @ 36µA 29nC @ 10V 2100pF @ 40V 6V, 10V ±20V
IPZ40N04S5L4R8ATMA1
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RFQ
3,424
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Infineon Technologies MOSFET N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 48W (Tc) N-Channel - 40V 40A (Tc) 4.8 mOhm @ 20A, 10V 2V @ 17µA 29nC @ 10V 1560pF @ 25V 4.5V, 10V ±16V