Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC052N03LSATMA1
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1,641
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Infineon Technologies MOSFET N-CH 30V 17A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 28W (Tc) N-Channel - 30V 17A (Ta), 57A (Tc) 5.2 mOhm @ 30A, 10V 2V @ 250µA 12nC @ 10V 770pF @ 15V 4.5V, 10V ±20V
BSC520N15NS3GATMA1
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3,967
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Infineon Technologies MOSFET N-CH 150V 21A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 57W (Tc) N-Channel - 150V 21A (Tc) 52 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 890pF @ 75V 8V, 10V ±20V
BSZ520N15NS3GATMA1
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1,811
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Infineon Technologies MOSFET N-CH 150V 21A 8-TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 57W (Tc) N-Channel - 150V 21A (Tc) 52 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 890pF @ 75V 8V, 10V ±20V
IPL60R650P6SATMA1
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1,455
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Infineon Technologies MOSFET N-CH 600V 8THINPAK CoolMOS™ P6 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-ThinPak (5x6) 56.8W (Tc) N-Channel - 600V 6.7A (Tc) 650 mOhm @ 2.4A, 10V 4.5V @ 200µA 12nC @ 10V 557pF @ 100V 10V ±20V