Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC029N025S G
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Infineon Technologies MOSFET N-CH 25V 100A TDSON-8 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 78W (Tc) N-Channel - 25V 24A (Ta), 100A (Tc) 2.9 mOhm @ 50A, 10V 2V @ 80µA 41nC @ 5V 5090pF @ 15V 4.5V, 10V ±20V
BSC0902NSATMA1
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1,357
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Infineon Technologies MOSFET N-CH 30V 100A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 48W (Tc) N-Channel - 30V 24A (Ta), 100A (Tc) 2.6 mOhm @ 30A, 10V 2.2V @ 250µA 26nC @ 10V 1700pF @ 15V 4.5V, 10V ±20V
BSC028N06NSTATMA1
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2,649
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 3W (Ta), 100W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 3.3V @ 50µA 49nC @ 10V 3375pF @ 30V 6V, 10V ±20V
BSC027N04LSGATMA1
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3,864
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) N-Channel - 40V 24A (Ta), 100A (Tc) 2.7 mOhm @ 50A, 10V 2V @ 49µA 85nC @ 10V 6800pF @ 20V 4.5V, 10V ±20V